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Products > Rapid Thermal Process

Real RTP 100

Real substrate temperature & Accurate temperature Control

APPLICATIONS

APPLICABLE SUBSTRATE

FEATURES

SPECIFICATIONS

Product Sample	Si, Sapphire, Glass, Ceramic, etc.
Substrate Size	4inch
Substrate Holder	Standard : Quartz (Pin) / Option : SiC coated graphite
Temperature Range	150~1,250℃
Heating Rate	10~200℃/sec for Silicon wafer 10~50℃/sec for Substrate on SiC coated graphite susceptor
Control Zone	1-Zone
Temperature Uniformity	≤ ±1.5% (@800℃, Silicon wafer) ≤ ±1.0% (@800℃, Substrate on SiC coated graphite susceptor)
Temperature Accuracy	≤ ±3℃
Temperature Repeatability	≤ ±3℃
Vacuum	Standard : 5.0E-3 Torr / Option : 1.0E-6 Torr
Gas Supply	3 channels (Extensible)
Control	PC control
Dimension (wdh)	870mm650mm620mm

DIMENSION

870mm(W) * 650mm(D) * 620mm(H)

LAYOUT

Max. 1,250℃ Heating

DATA

Anneal Hold Time ≥ 35min @1,000℃

DATA

Application

- Evaporation method

DATA

REF. RTP process condition 1200℃ : wafer temp. average 1156.6℃
RTO process condition : SV 1200℃, wafer rotation 10RPM, O2 1000sccm, Normal atmospheric pressure
Dry oxidation process REF. : 1200℃, 23min  Goal : SiO2 100nm
RTO oxide thickness DGIST ellisometer measurement (6” Si wafer edge 10mm)

6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity
6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity

DATA

DATA

DATA