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Products > Rapid Thermal Process

Real RTP miniV

Small size Desktop Rapid Thermal Process System

APPLICATIONS

Piece Sample Rapid Thermal Annealing
Wire Sample Rapid Thermal Annealing (with wire winding/unwinding mechanism)
Evaluate Tensile Strength by temperature in testing tensile strength of optical fiber.
Heat treatment of fine metal wire, tube, bar
Sintering, curing of linear ceramic

FEATURES

SPECIFICATIONS

Product Sample	Si, Sapphire, Glass, Ceramic, Optical Fiber, etc.
Substrate Type	Piece, Wire
Temperature Range	150~1,000℃
Control Zone	1-Zone
Vacuum	Standard : ATM Option : 5.0E-3 Torr
Gas Supply	Option : : Up to 3 process gas lines with digital MFC or Flow meter
Control	Manual control by Push Button (Include USB communication port)
Remark	Option : Wire Winding/Unwinding Mechanism

Max. 1,250℃ Heating

DATA

Anneal Hold Time ≥ 35min @1,000℃

DATA

Application

- Evaporation method

DATA

REF. RTP process condition 1200℃ : wafer temp. average 1156.6℃
RTO process condition : SV 1200℃, wafer rotation 10RPM, O2 1000sccm, Normal atmospheric pressure
Dry oxidation process REF. : 1200℃, 23min  Goal : SiO2 100nm
RTO oxide thickness DGIST ellisometer measurement (6” Si wafer edge 10mm)

6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity
6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity

DATA

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