PRODUCTS

Technology innovation with advanced Technology create the future

Growth

Industrial

Products > Rapid Thermal Process

Real RTP mini 50

Small size Desktop Rapid Thermal Process System

APPLICATIONS

FEATURES

SPECIFICATIONS

Product Sample	Si, Sapphire, Glass, Ceramic, etc.
Substrate Size	3inch , 50mm*50mm
Substrate Holder	Quartz
Temperature Range	150~1,200℃
Heating Rate	10~50℃/sec
Control Zone	1-Zone
Temperature Accuracy	≤ ±3℃
Temperature Repeatability	≤ ±3℃
Vacuum	Standard : ATM Option : 5.0E-3 Torr
Gas Supply	Option : : Up to 3 process gas lines with digital MFC or Flow meter
Control	Manual control by Push Button (Include USB communication port)
Dimension (wdh)	650mm450mm250mm
Weight	55kg

DIMENSION

600mm(W) * 550mm(D) * 350mm(H)

LAYOUT

Max. 1,250℃ Heating

DATA

Anneal Hold Time ≥ 35min @1,000℃

DATA

Application

- Evaporation method

DATA

REF. RTP process condition 1200℃ : wafer temp. average 1156.6℃
RTO process condition : SV 1200℃, wafer rotation 10RPM, O2 1000sccm, Normal atmospheric pressure
Dry oxidation process REF. : 1200℃, 23min  Goal : SiO2 100nm
RTO oxide thickness DGIST ellisometer measurement (6” Si wafer edge 10mm)

6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity
6” Si wafer SiO2 Thickness (Å)	Top	Right	Left	Bottom	Center	Max	Min	AVG	Uniformity

DATA

DATA

DATA