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Grapnene/MoS2/WS2/CNT/SiGe/SiC CVD system

APPLICATIONS

Industry

Si ULSI
High speed compound semiconductor devices
PV (thin film cells and silicon heterojunction passivation)
Display : TFT-LCD & OLED
photocopier drums
Low friction surfaces, protective coatings, medical implants
Thermal conductivity substrates in CMOS; hard coating for cutting tools
Dry etching, photoresist removal, treatment of ink-jet metal prints, and surface cleaning
Food packaging

FEATURES

Sample loader-sliding mechanism is equipped for rapid heating/cooling of samples.
A special thermocouple sensor is equipped for directly monitoring of the sample temperature.
Compact size, steady chassis.
Other carbon nano-materials (carbon nanotubes, carbon microcoils) can also be synthesized.
Enable thermal & Plasma Enhanced CVD system
Excellent reproducibility

SPECIFICATIONS

DATA

Fullly covered graphene over substrate (SEM image)
- graphene is fully covered at each growth temperature condition

DATA

TEM results
- Layer thickness increases with temperature
(20nm at 700℃ -> 30nm at 750℃)

DATA

SEM results
- Thick graphite lumps are formed at 800℃

DATA

Fullly covered graphene over substrate (Raman spectrum)
- graphene is fully covered at each growth temperature condition

DATA

Silicon nano wire (SEM & TEM)